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| AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4476 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AO4476 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5m (VGS = 10V) RDS(ON) < 17m (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C IDSM IDM PD TJ, TSTG Maximum 30 20 15 12 60 3.7 2.4 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 28 57 16 Max 34 71 23 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4476 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=12A Forward Transconductance VDS=5V, ID=15A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 60 8.5 11 14 33 0.73 1.0 5 1000 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 340 100 1.3 18 VGS=10V, VDS=15V, ID=15A 8.5 3.1 4.8 6 VGS=10V, VDS=15V, RL=1, RGEN=3 IF=15A, dI/dt=100A/s 3.8 20 3.8 28 21 17 10.5 2.1 Min 30 1 5 0.1 2.5 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4476 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 4.5V 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 18 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 25 30 -50 -20 10 40 70 100 130 160 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 IS (A) 20 15 10 5 2 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=4.5 VGS=10V ID=15A VGS=4.5 7V 10V 4V ID(A) 30 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 125 VDS=5V VGS=3.5V 15 RDS(ON) (m) VGS=4.5V 12 9 VGS=10V 0 5 10 15 20 VGS=10V 6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) ID=15A 125C 25C 25C Alpha & Omega Semiconductor, Ltd. AO4476 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=15A Capacitance (pF) 1500 1200 900 600 300 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Ciss Coss Crss 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 RDS(ON) limited TJ(Max)=175C TC=25C 10s Power (W) 100 10ms DC 1m 140 120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note G) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=34C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. |
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